Application of Organic Semiconductors for the Detection of Ionizing Radiations

One year aged organic bilayer Al/PCTDA/CuPc/ITO structure prepared with ICB deposition method has been used to evaluate the influence of ionising radiation to electrical properties of the structure. Small sources of α, β and γ radiation were used for preliminary measurements. Capacitance and current measurements were performed on samples with and without presence of ionising radiation and results compared. Effect of β and γ radiation has not been confirmed due to the limited activity of available sources. Presence of α radiation has noticeably changed the capacitance of reversely biased structure and produced increase of current through the structure. We have tried to explain the capacitance properties using the model previously developed for the organic bilayer structures, but we did not manage to resolve all effects involved.